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| VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 1150 A 1800 A 15000 A 0.95 V 0.575 m Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-03 Jan. 02 * * * * Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Symbol VDRM, VRRM VRSM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 0.67 x VDRM, Tvj = 125C 5STP 12F4200 4200 V 4600 V 5STP 12F4000 4000 V 4400 V 1000 V/s min typ 5STP 12F3600 3600 V 4000 V Characteristic values Symbol Conditions IDRM IRRM VDRM, Tvj = 125C VRRM, Tvj = 125C max 200 200 Unit mA mA Forward leakage current Reverse leakage current Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 14 typ 22 max 24 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Air strike distance Symbol Conditions m DS Da min 25 14 typ 0.6 max 1) Maximum ratings are those values beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 12F4200 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions ITAVM ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125C, VD = VR=0 V Half sine wave, Tc = 70C min typ max 1150 1800 15000 1125 16000 1062 Unit A A A kA2s A kA2s Unit V V m mA mA mA mA Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT VT0 rT IH IL Tvj = 25C Tvj = 125C Tvj = 25C Tvj = 125C IT = 2000 A, Tvj= 125C IT = 600 A - 1800 A, Tvj= 125C min typ max 2.1 0.95 0.575 80 60 500 200 Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Cont. Tvj = 125C, ITRM = 2000 A, f = 50 Hz VD 0.67VDRM, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s, min typ max 100 1000 Unit A/s A/s s Circuit-commutated turn-off tq time Characteristic values 600 Parameter Recovery charge Delay time Symbol Conditions Qrr td Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -5 A/s VD = 0.4VDRM, IFG = 2 A, tr = 0.5 s min 2500 typ max 4000 2 Unit As s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 2 of 6 5STP 12F4200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG PGAV Symbol Conditions VGT IGT VGD IGD Tvj = 25C Tvj = 25C VD = 0.4 x VDRM, Tvjmax = 125C VD = 0.4 x VDRM, Tvjmax = 125C For DC gate current min typ max 12 10 10 3 Unit V A V W see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled -40 min typ 140 max 17 33 35 4 8 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i Ri(K/kW) i(s) 1 10.35 0.3723 2 3.76 0.0525 3 2.29 0.0057 4 0.67 0.0023 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 3 of 6 5STP 12F4200 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125C, 10ms half sine Fig. 4 On-state power dissipation vs. mean on-state current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 4 of 6 5STP 12F4200 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1021-03 Jan. 02 page 5 of 6 5STP 12F4200 Fig. 12 Device Outline Drawing. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1021-03 Jan. 02 |
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